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If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
Metal–oxide–semiconductor field-effect transistor (MOSFET), showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern ...
The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance .
A double-gate MOSFET was first demonstrated in 1984 by Electrotechnical Laboratory researchers Toshihiro Sekigawa and Yutaka Hayashi. [43] [44] FinFET (fin field-effect transistor), a type of 3D non-planar multi-gate MOSFET, originated from the research of Digh Hisamoto and his team at Hitachi Central Research Laboratory in 1989. [45] [46]
In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example).
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]