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A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
Bipolar transistors have four distinct regions of operation, defined by BJT junction biases: [9] [10] Forward-active (or simply active) The base–emitter junction is forward biased and the base–collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, β F, in
Date/Time Thumbnail Dimensions User Comment; current: 01:52, 23 August 2006: 740 × 400 (87 KB): Matt Britt == Summary == Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position.
The following are the alternating loops that implement the desired equations and some biasing schemes for the circuit. The translinear loops that implement our desired equations. A biasing scheme for the alternating TL two-quadrant multiplier circuit using diode connections and an EP connection. A biasing scheme that consolidates some current ...
As an example of the need for careful biasing, consider a transistor amplifier. In linear amplifiers , a small input signal gives a larger output signal without any change in shape (low distortion): the input signal causes the output signal to vary up and down about the Q-point in a manner strictly proportional to the input.
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters . The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be ...
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
This, in turn, causes the p, n and p layers over MT2 to behave like a PNP transistor, which turns on because its n-type base becomes forward-biased with respect to its emitter (MT2). Thus, the triggering scheme is the same as an SCR. The equivalent circuit is depicted in Figure 4. However, the structure is different from SCRs.