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The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. This may be necessary to set up the ...
Etching a (100) silicon surface through a rectangular hole in a masking material, like a hole in a layer of silicon nitride, creates a pit with flat sloping {111}-oriented sidewalls and a flat (100)-oriented bottom. The {111}-oriented sidewalls have an angle to the surface of the wafer of:
The optional second step (for bare silicon wafers) is a short immersion in a 1:100 or 1:50 solution of aqueous HF (hydrofluoric acid) at 25 °C for about fifteen seconds, in order to remove the thin oxide layer and some fraction of ionic contaminants. If this step is performed without ultra high purity materials and ultra clean containers, it ...
The resulting mixture is used to clean organic residues off substrates, for example silicon wafers. [1] Because the mixture is a strong oxidizing agent , it will decompose most organic matter , and it will also hydroxylate most surfaces (by adding –OH groups), making them highly hydrophilic (water-compatible).
DISCO Corporation (株式会社ディスコ, Kabushiki-gaisha Disuko) is a Japanese precision tools maker, especially for the semiconductor production industry.. The company makes dicing saws and laser saws to cut semiconductor silicon wafers and other materials; grinders to process silicon and compound semiconductor wafers to ultra-thin levels; polishing machines to remove the grinding damage ...
The compound is applied to the silicon wafer in liquid form and polymerization is controlled through exposure to light. Because Photoresists are non polar compounds, and silicon dioxide has a polar character, adhesion problems can manifest between the two materials. When photoresist does not adhere properly, features lose resolution.