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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
MMDS—Multichannel Multipoint Distribution Service; MMF—Multi-Mode (optical) Fiber; MMIO—Memory-Mapped I/O; MMI—Man Machine Interface. MMORPG—Massively Multiplayer Online Role-Playing Game; MMS—Multimedia Message Service; MMU—Memory Management Unit; MMX—Multi-Media Extensions; MNG—Multiple-image Network Graphics; MoBo—Motherboard
1.2 CMOS (single-gate) 1.3 Multi-gate MOSFET (MuGFET) 1.4 Other types of MOSFET. 2 Commercial products using micro-scale MOSFETs.
The contract involves delivery of bare dies or the assembly and packaging of a handful of devices. The service usually involves the supply of a physical design database (i.e. masking information or pattern generation (PG) tape). The manufacturer is often referred to as a "silicon foundry" due to the low involvement it has in the process.
The first CMOS family of logic integrated circuits was introduced by RCA as CD4000 COS/MOS, the 4000 series, in 1968. Initially CMOS logic was slower than LS-TTL. However, because the logic thresholds of CMOS were proportional to the power supply voltage, CMOS devices were well-adapted to battery-operated systems with simple power supplies.
STI is generally used on CMOS process technology nodes of 250 nanometers and smaller. Older CMOS technologies and non-MOS technologies commonly use isolation based on LOCOS. [1] STI is created early during the semiconductor device fabrication process, before transistors are formed.
By 2007, sales of CMOS active-pixel sensors had surpassed CCD sensors, with CMOS sensors accounting for 54% of the global image sensor market at the time. By 2012, CMOS sensors increased their share to 74% of the market. As of 2017, CMOS sensors account for 89% of global image sensor sales. [24]
In 1988, an IBM research team led by Iranian engineer Bijan Davari fabricated a 180 nm dual-gate MOSFET using a CMOS process. [5] The 180 nm CMOS process was later commercialized by TSMC in 1998, [ 1 ] and then Fujitsu in 1999.