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DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency .
Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory (GDDR7 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard, with a high bandwidth, "double data rate" interface, designed for use in graphics cards, game consoles, and high-performance computing.
Larger packages providing double width (four channels) and up to four dies per pair of channels (8 dies total per package) are also defined. Data is accessed in bursts of either 16 or 32 transfers (256 or 512 bits, 32 or 64 bytes, 8 or 16 cycles DDR). Bursts must begin on 64-bit boundaries.
High-capacity DIMMs such as 256 GB DIMMs can have up to 19 chips per side. In the case of "×4" registered DIMMs, the data width per side is 36 bits; therefore, the memory controller (which requires 72 bits) needs to address both sides at the same time to read or write the data it needs. In this case, the two-sided module is single-ranked.
The SK Hynix chips were expected to have a transfer rate of 14–16 Gbit/s. [4] The first graphics cards to use SK Hynix's GDDR6 RAM were expected to use 12 GB of RAM with a 384-bit memory bus, yielding a bandwidth of 768 GB/s. [3] SK Hynix began mass production in February 2018, with 8 Gbit chips and a data rate of 14 Gbit/s per pin. [14]
The notch on DDR2 DIMMs is in a different position from DDR DIMMs, and the pin density is higher than DDR DIMMs in desktops. DDR2 is a 240-pin module, DDR is a 184-pin module. Notebooks have 200-pin SO-DIMMs for DDR and DDR2; however, the notch on DDR2 modules is in a slightly different position than on DDR modules.
In contrast, the prefetch buffer of DDR2 is 4-burst-deep, and the prefetch buffer of DDR is 2-burst-deep. This advantage is an enabling technology in DDR3's transfer speed. DDR3 modules can transfer data at a rate of 800–2133 MT /s using both rising and falling edges of a 400–1066 MHz I/O clock .
The number of physical DRAMs depends on their individual widths. For example, a rank of ×8 (8-bit wide) DRAMs would consist of eight physical chips (nine if ECC is supported), but a rank of ×4 (4-bit wide) DRAMs would consist of 16 physical chips (18, if ECC is supported). Multiple ranks can coexist on a single DIMM.