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Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
The metal–oxide–semiconductor field-effect transistor (MOSFET) relies on band bending. When the transistor is in its so called 'off state' there is no voltage applied on the gate and the first p-n junction is reversed bias. The potential barrier is too high for the electrons to pass thus no current flows.
To understand how band structure changes relative to the Fermi level in real space, a band structure plot is often first simplified in the form of a band diagram. In a band diagram the vertical axis is energy while the horizontal axis represents real space. Horizontal lines represent energy levels, while blocks represent energy bands. When the ...
Electrons from the valence band of the p-type region tunnel into the conduction band of the intrinsic region and current can flow across the device. [5] As the gate bias is reduced, the bands become misaligned and current can no longer flow. Energy band diagram for a basic lateral TFET structure.
In an intrinsic or lightly doped semiconductor, μ is close enough to a band edge that there are a dilute number of thermally excited carriers residing near that band edge. In semiconductors and semimetals the position of μ relative to the band structure can usually be controlled to a significant degree by doping or gating.
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
Electronic band structure of a semiconductor material. Like other solids, semiconductor materials have an electronic band structure determined by the crystal properties of the material. Energy distribution among electrons is described by the Fermi level and the temperature of the electrons.
Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). [1]