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At room temperature, JFET gate current (the reverse leakage of the gate-to-channel junction) is comparable to that of a MOSFET (which has insulating oxide between gate and channel), but much less than the base current of a bipolar junction transistor. The JFET has higher gain (transconductance) than the MOSFET, as well as lower flicker noise ...
The JFET (junction field-effect transistor) uses a reverse biased p–n junction to separate the gate from the body. The static induction transistor (SIT) is a type of JFET with a short channel. The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time.
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
Svenska: Schematisk symbol för en JFET (Junction Field Effect Transistor) N-kanal. Date: 1/06/06: Source: From Scratch in Inkcape 0.43: Author: jjbeard: Permission
In electronics, a common-source amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage or transconductance amplifier. The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is ...
The JFET and bipolar junction transistor (BJT) are preferred for accurate matching (of adjacent devices in integrated circuits), higher transconductance and certain temperature characteristics which simplify keeping performance predictable as circuit temperature varies.
Besides amplifiers, discrete JFET matched pairs are also used in the design of voltage controlled resistors, voltage controlled current sources, current to voltage converters, programmable gain circuits, voltmeters, phasers and a wide range of analog computational circuits like absolute value circuits These blocks often are designed with ...
The drain-to-source resistance of the JFET (R DS) and the drain resistor (R 1) form the voltage-divider network. The output voltage can be determined from the equation V out = V DC · R DS / (R 1 + R DS). An LTSpice simulation of the non-linearized VCR design verifies that the JFET resistance changes with a change in gate-to-source voltage (V ...