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In immersion lithography, light travels down through a system of lenses and then a pool of water before reaching the photoresist on top of the wafer. Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process .
This method, called immersion lithography, is the current cutting edge of practical production technology. It works because numerical aperture is a function of the maximum angle of light that can enter the lens and the refractive index of the medium through which the light passes. When water is employed as the medium, it greatly increases ...
High-index immersion lithography is the newest extension of 193 nm lithography to be considered. In 2006, features less than 30 nm were demonstrated by IBM using this technique. [72] These systems used CaF 2 calcium fluoride lenses. [73] [74] Immersion lithography at 157 nm was explored. [75]
The most obvious case requiring multiple patterning is when the feature pitch is below the resolution limit of the optical projection system. For a system with numerical aperture NA and wavelength λ, any pitch below 0.5 λ/NA would not be resolvable in a single wafer exposure.
Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.
AMSTERDAM (Reuters) -Dutch semiconductor equipment maker ASML said on Thursday it is shipping the first of its new "High NA" extreme ultraviolet lithography systems to Intel Corp. ASML published ...
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The emergence of immersion lithography has a strong impact on photomask requirements. The commonly used attenuated phase-shifting mask is more sensitive to the higher incidence angles applied in "hyper-NA" lithography, due to the longer optical path through the patterned film. [15]