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Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure.
In December 2023, western media reported that SMEE has completed the initial development of its new SSA800-10W immersion lithography machine which has a scanning resolution capable of fabricating 28 nm-process class chips. Instances of the new machine may have been delivered to manufacturers such as SMIC and to research institutes.
Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.
This method, called immersion lithography, is the current cutting edge of practical production technology. It works because numerical aperture is a function of the maximum angle of light that can enter the lens and the refractive index of the medium through which the light passes. When water is employed as the medium, it greatly increases ...
The machines in question, ASML's 1970i and 1980i DUV (Deep Ultraviolet) immersion lithography tools, are approximately in the middle of its product range. Under U.S. pressure, the Dutch government ...
ASML Holding N.V. (commonly shortened to ASML, originally standing for Advanced Semiconductor Materials Lithography) is a Dutch multinational corporation founded in 1984. . ASML specializes in the development and manufacturing of photolithography machines which are used to produce computer c
High-index immersion lithography is the newest extension of 193 nm lithography to be considered. In 2006, features less than 30 nm were demonstrated by IBM using this technique. [72] These systems used CaF 2 calcium fluoride lenses. [73] [74] Immersion lithography at 157 nm was explored. [75]
IM Flash has been able to devise 25-nm NAND chips with 193-nm immersion lithography, plus self-aligned double-patterning (SADP) techniques, where it is widely believed that it is using scanners from ASML Holdings NV and SADP technology. [3] In 2011 IM Flash moved to a 20 nm process– which was the smallest NAND flash technology at the time. [4]