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Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure.
This method, called immersion lithography, is the current cutting edge of practical production technology. It works because numerical aperture is a function of the maximum angle of light that can enter the lens and the refractive index of the medium through which the light passes. When water is employed as the medium, it greatly increases ...
Immersion lithography scanners use a layer of Ultrapure water between the lens and the wafer to increase resolution. An alternative to photolithography is nanoimprint lithography. The maximum size of the image that can be projected onto a wafer is known as the reticle limit.
Multiple patterning with immersion scanners can be expected to have higher wafer productivity than EUV, even with as many as 4 passes per layer, due to faster wafer exposure throughput (WPH), a larger number of tools being available, and higher uptime.
Many technologies once termed "next generation" have entered commercial production, and open-air photolithography, with visible light projected through hand-drawn photomasks, has gradually progressed to deep-UV immersion lithography using optical proximity correction, inverse lithography technology, off-axis illumination, phase-shift masks ...
Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.
Similar to immersion lithography, the use of SIL can increase spatial resolution of projected photolithographic patterns, creating smaller components on wafers. Emission Microscopy Offers advantages for semiconductor wafer emission microscopy which detects faint emissions of light (Photons) from electron-hole recombination under the influence ...
Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after ...