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  2. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier.

  3. Early effect - Wikipedia

    en.wikipedia.org/wiki/Early_effect

    The Early voltage (V A) as seen in the output-characteristic plot of a BJT. The Early effect , named after its discoverer James M. Early , is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage.

  4. Bipolar transistor biasing - Wikipedia

    en.wikipedia.org/wiki/Bipolar_transistor_biasing

    A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.

  5. Hybrid-pi model - Wikipedia

    en.wikipedia.org/wiki/Hybrid-pi_model

    Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.

  6. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. [10] Later the similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was also invented at Bell Labs.

  7. 2N2222 - Wikipedia

    en.wikipedia.org/wiki/2N2222

    The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture.

  8. Alpha vs. beta in investing: What’s the difference? - AOL

    www.aol.com/finance/alpha-vs-beta-investing...

    Alpha is a way to measure excess return, while beta is used to measure the volatility, or risk, of an asset. Beta might also be referred to as the return you can earn by passively owning the market.

  9. Common emitter - Wikipedia

    en.wikipedia.org/wiki/Common_emitter

    In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier. It offers high current gain (typically 200), medium input resistance and a high output resistance.

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