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Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
A common technique used in compound semiconductor growth is molecular beam epitaxy (MBE). In this method, a source material is heated to produce an evaporated beam of particles, which travel through a very high vacuum (10 −8 Pa; practically free space) to the substrate and start epitaxial growth.
Molecular beam epitaxy (MBE) is an epitaxy method for the growth of a crystalline material on a crystalline substrate to form an ordered layer. MBE is performed in high vacuum or ultra-high vacuum , the elements are heated in different electron beam evaporators until they sublime .
The Knudsen cell is used to measure the vapor pressures of a solid with very low vapor pressure. Such a solid forms a vapor at low pressure by sublimation.The vapor slowly effuses through the pinhole, and the loss of mass is proportional to the vapor pressure and can be used to determine this pressure. [1]
Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. [6] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). [7]
John R. Arthur Jr. is an American materials scientist best known as a pioneer of molecular beam epitaxy. Together with Alfred Y. Cho, Arthur pioneered molecular beam epitaxy at Bell Laboratories, where he published a paper in July 1968 that described construction of epitaxial gallium arsenide layers using molecular beam epitaxy.
Illustration of the process. Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), [1] is a chemical vapour deposition method used to produce single- or polycrystalline thin films.
[7] [8] This method is a predecessor of NMR. The invention of the maser in 1957 by James P. Gordon, Herbert J. Zeiger and Charles H. Townes was made possible by a molecular beam of ammonia and a special electrostatic quadrupole focuser. [9] The study of molecular beam led to the development of molecular-beam epitaxy in the 1960s.