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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
A Schottky diode is a single metal–semiconductor junction, used for its rectifying properties. Schottky diodes are often the most suitable kind of diode when a low forward voltage drop is desired, such as in a high-efficiency DC power supply. Also, because of their majority-carrier conduction mechanism, Schottky diodes can achieve greater ...
A schematic symbol for Schottky diodes 1N5822 Schottky diode with cut-open packaging. The semiconductor in the center makes a Schottky barrier against one metal electrode (providing rectifying action) and an ohmic contact with the other electrode. SS14 schottky diode in DO-214AC (SMA) (SOD-106) surface-mount package version of 1N5819 [1]
The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Atalla and Kahng during 1960–1961. [ 23 ] [ 24 ] They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter. [ 25 ]
Diodes Incorporated is a global manufacturer and supplier of application specific standard products within the discrete, logic, analog, and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). [43] [44] A typical example is the 1N914.
An aspect of most rectification is a loss from the peak input voltage to the peak output voltage, caused by the built-in voltage drop across the diodes (around 0.7 V for ordinary silicon p–n junction diodes and 0.3 V for Schottky diodes). Half-wave rectification and full-wave rectification using a center-tapped secondary produces a peak ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]