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In computing, magnetic-core memory is a form of random-access memory. It predominated for roughly 20 years between 1955 and 1975, and is often just called core memory , or, informally, core . Core memory uses toroids (rings) of a hard magnetic material (usually a semi-hard ferrite ).
A magnetic shape-memory alloy (MSMA) is a type of smart material that can undergo significant and reversible changes in shape in response to a magnetic field. This behavior arises due to a combination of magnetic and shape-memory properties within the alloy, allowing it to produce mechanical motion or force under magnetic actuation.
Magnetic storage or magnetic recording is the storage of data on a magnetized medium. Magnetic storage uses different patterns of magnetisation in a magnetizable material to store data and is a form of non-volatile memory. The information is accessed using one or more read/write heads.
The two most prevalent shape-memory alloys are copper-aluminium-nickel and nickel-titanium (), but SMAs can also be created by alloying zinc, copper, gold and iron.Although iron-based and copper-based SMAs, such as Fe-Mn-Si, Cu-Zn-Al and Cu-Al-Ni, are commercially available and cheaper than NiTi, NiTi-based SMAs are preferable for most applications due to their stability and practicability [1 ...
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory . [ 2 ]
A magnetic core is a piece of magnetic material with a high magnetic ... the permeability of mu-metal increases about 40 times after ... Magnetic-core memory;
Paramagnetism, ferromagnetism, and spin waves. Ferromagnetism is a property of certain materials (such as iron) that results in a significant, observable magnetic permeability, and in many cases, a significant magnetic coercivity, allowing the material to form a permanent magnet.
Data reliability is guaranteed in F-RAM even in a high magnetic field environment compared to MRAM. Cypress Semiconductor's [16] F-RAM devices are immune to the strong magnetic fields and do not show any failures under the maximum available magnetic field strengths (3,700 Gauss for horizontal insertion and 2,000 Gauss for vertical insertion ...