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Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the target's physical, chemical, or electrical properties. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research.
In the most common industrial example, rapid thermal processing is applied to silicon following the ion implantation of dopants such as phosphorus, arsenic and boron. [2] Vacancies generated at elevated temperature (1200 °C) facilitate the movement of these species from interstitial to substitutional lattice sites while amorphization damage ...
PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
The process repeats until the analyte is free of solvent and is a bare ion. The ions observed are created by the addition of a proton (a hydrogen ion) and denoted [M + H] + , or of another cation such as sodium ion, [M + Na] + , or the removal of a proton, [M − H] − .
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All quantities are in Gaussian units except energy and temperature which are in electronvolts.For the sake of simplicity, a single ionic species is assumed. The ion mass is expressed in units of the proton mass, = / and the ion charge in units of the elementary charge, = / (in the case of a fully ionized atom, equals to the respective atomic number).
Besides providing independent control of parameters such as ion energy, temperature and arrival rate of atomic species during deposition, this technique is especially useful to create a gradual transition between the substrate material and the deposited film, and for depositing films with less built-in strain than is possible by other techniques.