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Zinc oxide is an inorganic compound with the formula Zn O.It is a white powder which is insoluble in water. ZnO is used as an additive in numerous materials and products including cosmetics, food supplements, rubbers, plastics, ceramics, glass, cement, lubricants, [12] paints, sunscreens, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, semi conductors ...
ZnO is a semiconductor material with a wide band gap energy of 3.3eV and has the potential to be widely used on the nanoscale. ZnO nanostructures have found uses in environmental, technological and biomedical purposes including ultrafast optical functions, dye-sensitised solar cells , lithium-ion batteries , biosensors , nanolasers [ 2 ] and ...
The best example is zinc oxide, which shows excellent optical characteristics, though it remains problematic to create sufficient charge carrier densities via doping in zinc oxide. [3] Diagram of the band gap plotted versus the lattice parameter a of the ternary alloy combinations of ZnO, CdO and MgO
The optical band gap (see below) determines what portion of the solar spectrum a photovoltaic cell absorbs. [18] Strictly, a semiconductor will not absorb photons of energy less than the band gap; whereas most of the photons with energies exceeding the band gap will generate heat. Neither of them contribute to the efficiency of a solar cell.
Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS. This is the main form of zinc found in nature, where it mainly occurs as the mineral sphalerite . Although this mineral is usually black because of various impurities, the pure material is white, and it is widely used as a pigment.
Oxidation of hydrocarbons, alcohols, carbon monoxide, and ammonia occurs when stimulated with light of greater energy than the band gap of the metal oxide. [ 22 ] [ 2 ] Homophasic and heterophasic light-induced oxygen isotope exchange has also been observed over TiO 2 and ZnO.
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.