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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
1.2 CMOS (single-gate) 1.3 Multi-gate MOSFET (MuGFET) 1.4 Other types of MOSFET. 2 Commercial products using micro-scale MOSFETs.
The first CMOS family of logic integrated circuits was introduced by RCA as CD4000 COS/MOS, the 4000 series, in 1968. Initially CMOS logic was slower than LS-TTL. However, because the logic thresholds of CMOS were proportional to the power supply voltage, CMOS devices were well-adapted to battery-operated systems with simple power supplies.
In high performance CMOS (complementary metal–oxide–semiconductor) amplifier circuits, transistors are not only used to amplify the signal but are also used as active loads to achieve higher gain and output swing in comparison with resistive loads. [1] [2] [3] CMOS technology was introduced primarily for digital circuit design.
CMOS is a complementary metal–oxide–semiconductor, a class of integrated circuits. CMOS may also refer to: Technology. Nonvolatile BIOS memory, in a personal ...
CMOS—Complementary metal–oxide–semiconductor; CMS—Content management system; CN—Canonical Name; CN—Common Name; CNC—Computerized numerical control; CNG—Cryptographic Next Generation; CNR—Communications and Networking Riser; COBOL—Common Business-Oriented Language; COM—Component Object Model or communication
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The first CMOS gate arrays were developed by Robert Lipp, [5] [6] in 1974 for International Microcircuits, Inc. (IMI). [ 3 ] Metal–oxide–semiconductor (MOS) standard-cell technology was introduced by Fairchild and Motorola , under the trade names Micromosaic and Polycell, in the 1970s.