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This can be the gate material, the location of the gate with respect to the channel, how the gate is isolated from the channel, and what type of carrier is induced by the gate voltage into channel (such as electrons in an n-channel device, holes in a p-channel device, and both electrons and holes in a double injection device). Figure 1.
A tri-gate transistor, also known as a triple-gate transistor, is a type of MOSFET with a gate on three of its sides. [28] A triple-gate transistor was first demonstrated in 1987, by a Toshiba research team including K. Hieda, Fumio Horiguchi and H. Watanabe.
In the semiconductor at the smaller voltage shown in the top panel, the positive charge placed on the left face of the insulator lowers the energy of the valence band edge. Consequently, these states are fully occupied out to a so-called depletion depth where the bulk occupancy reestablishes itself because the field cannot penetrate further.
Conversely, a positive gate-to-source voltage increases the channel size and allows electrons to flow easily (see right figure, when there is a conduction channel and current is large). In an n-channel "enhancement-mode" device, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is ...
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
The R-pulled circuit acts like a NOR gate that sinks OUT to the GND. As an example, here is a NOR gate implemented in schematic NMOS. If either input A or input B is high (logic 1, = True), the respective MOS transistor acts as a very low resistance between the output and the negative supply, forcing the output to be low (logic 0, = False).
The greater the positive charge placed on the gate, the more positive the applied gate voltage, and the more holes that leave the semiconductor surface, enlarging the depletion region. (In this device there is a limit to how wide the depletion width may become.
The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. [1] They used silicon as channel material and a non-self-aligned aluminum gate. [2]