Search results
Results From The WOW.Com Content Network
In the semiconductor at the smaller voltage shown in the top panel, the positive charge placed on the left face of the insulator lowers the energy of the valence band edge. Consequently, these states are fully occupied out to a so-called depletion depth where the bulk occupancy reestablishes itself because the field cannot penetrate further.
Conversely, a positive gate-to-source voltage increases the channel size and allows electrons to flow easily (see right figure, when there is a conduction channel and current is large). In an n-channel "enhancement-mode" device, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is ...
A tri-gate transistor, also known as a triple-gate transistor, is a type of MOSFET with a gate on three of its sides. [28] A triple-gate transistor was first demonstrated in 1987, by a Toshiba research team including K. Hieda, Fumio Horiguchi and H. Watanabe.
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. [1] They used silicon as channel material and a non-self-aligned aluminum gate. [2]
Because of the lower power supply voltage, silicon gate PMOS logic is often referred to as low-voltage PMOS in contrast to the older, metal-gate PMOS as high-voltage PMOS. [3]: 89 For various reasons Fairchild Semiconductor did not proceed with the development of PMOS integrated circuits as intensively as the involved managers wanted.
The greater the positive charge placed on the gate, the more positive the applied gate voltage, and the more holes that leave the semiconductor surface, enlarging the depletion region. (In this device there is a limit to how wide the depletion width may become.
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating ...