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  2. Epitaxy - Wikipedia

    en.wikipedia.org/wiki/Epitaxy

    An epitaxial layer can be doped during deposition by adding impurities to the source gas, such as arsine, phosphine, or diborane. Dopants in the source gas, liberated by evaporation or wet etching of the surface, may also diffuse into the epitaxial layer and cause autodoping. The concentration of impurity in the gas phase determines its ...

  3. Lateral epitaxial overgrowth and pendeo-epitaxy - Wikipedia

    en.wikipedia.org/wiki/Lateral_epitaxial...

    The deposited crystalline film is called an epitaxial film or epitaxial layer. Epitaxial growth and semiconductor device fabrication are technologies used to develop stacked crystalline layers of different materials with specific semiconductor properties on a crystalline substrate, commonly silicon or silicon carbide (SiC) materials, to achieve ...

  4. Epitaxial wafer - Wikipedia

    en.wikipedia.org/wiki/Epitaxial_wafer

    Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. [6] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). [7]

  5. Molecular-beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Molecular-beam_epitaxy

    Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).

  6. Metalorganic vapour-phase epitaxy - Wikipedia

    en.wikipedia.org/wiki/Metalorganic_vapour-phase...

    Surface reaction of the precursor subspecies results in the incorporation of elements into a new epitaxial layer of the semiconductor crystal lattice. In the mass-transport-limited growth regime in which MOCVD reactors typically operate, growth is driven by supersaturation of chemical species in the vapor phase. [4]

  7. Stranski–Krastanov growth - Wikipedia

    en.wikipedia.org/wiki/Stranski–Krastanov_growth

    This layer-by-layer growth is two-dimensional, indicating that complete films form prior to growth of subsequent layers. [2] [3] Stranski–Krastanov growth is an intermediary process characterized by both 2D layer and 3D island growth. Transition from the layer-by-layer to island-based growth occurs at a critical layer thickness which is ...

  8. Wall Street Loves 4 Sizzling Stocks Trading Under $10 With ...

    www.aol.com/wall-street-loves-4-sizzling...

    It offers silicon carbide and GaN materials, including silicon carbide bare wafers, epitaxial wafers, and GaN epitaxial layers on silicon carbide wafers, to manufacture products for RF, power, and ...

  9. Epitaxial graphene growth on silicon carbide - Wikipedia

    en.wikipedia.org/wiki/Epitaxial_graphene_growth...

    Epitaxial graphene growth on silicon carbide (SiC) by thermal decomposition is a method to produce large-scale few-layer graphene (FLG). Graphene is one of the most promising nanomaterials for the future because of its various characteristics, like strong stiffness and high electric and thermal conductivity.