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A subsurface Zener diode, also called a buried Zener, is a device similar to the surface Zener, but the doping and design is such that the avalanche region is located deeper in the structure, typically several micrometers below the oxide. Hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer ...
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
Thus, as long as the Zener current (I Z) is above a certain level (called holding current), the voltage across the Zener diode (V Z) will be constant. Resistor, R1, supplies the Zener current and the base current (I B) of NPN transistor (Q1). The constant Zener voltage is applied across the base of Q1 and emitter resistor, R2.
A Zener diode contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the Zener voltage), and avalanche does not occur. Both devices, however, do have a limit to the maximum ...
Avalanche diodes (commonly encountered as high voltage Zener diodes) are constructed to break down at a uniform voltage and to avoid current crowding during breakdown. These diodes can indefinitely sustain a moderate level of current during breakdown. The voltage at which the breakdown occurs is called the breakdown voltage.
R 1 sets the Zener current (I Z) and is determined as = + where, V Z is the Zener voltage, I B is the transistor's base current, K = 1.2 to 2 (to ensure that R 1 is low enough for adequate I B) and = where, I R2 is the required load current and is also the transistor's emitter current (assumed to be equal to the collector current) and h FE(min ...
When the absorber is in the primary circuit, e.g. a Zener diode (or LED) with voltage V z connected "backwards" across the primary windings, the current waveshape is a triangle with the time t open determined by the formula I p = I peak,m - V z ×T open /L p, here I peak,m being the primary current at the time the switch opens. When the ...