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Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
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A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation .
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
The BC548 is a part of a family of NPN and PNP epitaxial silicon transistors that originated with the metal-cased BC108 family of transistors.The BC548 is the modern plastic-packaged BC108; [6] the BC548 article at the Radiomuseum website [7] describes the BC548 as a successor to the BC238 and differing from the BC108 in only the shape of the package.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]