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A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
F 2 is used as a measurement of area for different parts of a semiconductor device, based on the feature size of a semiconductor manufacturing process. Many semiconductor devices are designed in sections called cells, and each cell represents a small part of the device such as a memory cell to store data.
A few of the properties of semiconductor materials were observed throughout the mid-19th and first decades of the 20th century. The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers.
While silicon is the prevalent material for wafers used in the electronics industry, other compound III-V or II-VI materials have also been employed. Gallium arsenide (GaAs), a III-V semiconductor produced via the Czochralski method, gallium nitride (GaN) and silicon carbide (SiC) are also common wafer materials, with GaN and sapphire being ...
Silicon used in semiconductor device manufacturing is currently fabricated into boules that are large enough in diameter to allow the production of 300 mm (12 in.) wafers. Germanium (Ge) was a widely used early semiconductor material but its thermal sensitivity makes it less useful than silicon.
In silicon ICs, the most commonly used semiconductor in ICs, the first interconnects were made of aluminum. Aluminum was an ideal material for interconnects due to its ease of deposition and good adherence to silicon and silicon dioxide. Al interconnects are deposited by physical vapor deposition or chemical vapor deposition methods.
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