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When an electron leaves a helium atom, it leaves an electron hole in its place. This causes the helium atom to become positively charged. In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle denoting the lack of an electron at a position where one could exist in an atom or atomic lattice.
Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.
The carrier particles, namely the holes and electrons of a semiconductor, move from a place of higher concentration to a place of lower concentration. Hence, due to the flow of holes and electrons there is a current. This current is called the diffusion current. The drift current and the diffusion current make up the total current in the conductor.
A normally-bound electron (e.g., in a bond) in a reverse-biased diode may break loose due to a thermal fluctuation or excitation, creating a mobile electron-hole pair . If there is a voltage gradient (electric field) in the semiconductor, then the electron will move towards the positive voltage while the hole will move towards the negative voltage.
The net current I m in relationship is made up of the currents towards contact m and of the current transmitted from the contact m to all other contacts l ≠ m. That current equals the voltage μ m / e of contact m multiplied with the Hall conductivity of 2e 2 / h per edge channel. Fig 2: Contact arrangement for measurement of SdH oscillations
The "holes" are, in effect, electron vacancies in the valence-band electron population of the semiconductor and are treated as charge carriers because they are mobile, moving from atom site to atom site. In n-type semiconductors, electrons in the conduction band move through the crystal, resulting in an electric current.
The conventional "hole" current is in the negative direction of the electron current and the negative of the electrical charge which gives I x = ntw(−v x)(−e) where n is charge carrier density, tw is the cross-sectional area, and −e is the charge of each electron.
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.