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The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance .
The only terminal remaining is the source. This is a common-source FET circuit. The analogous bipolar junction transistor circuit may be viewed as a transconductance amplifier or as a voltage amplifier. (See classification of amplifiers). As a transconductance amplifier, the input voltage is seen as modulating the current going to the load.
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, [2] [3] [4] enabling the majority of the world's cellular voice and data traffic. [5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to ...
Producing 250 watts RMS of power per channel, these amplifiers were ideal for the big touring supergroups in the 1980s. Also there was the V-series of amplifiers, including the V100, V200, V500 and V800 MOSFET.
In this circuit, the base terminal of the transistor serves as the input, the collector is the output, and the emitter is common to both (for example, it may be tied to ground reference or a power supply rail), hence its name. The analogous FET circuit is the common-source amplifier, and the analogous tube circuit is the common-cathode amplifier.