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When more accuracy is desired in modelling the diode's turn-on characteristic, the model can be enhanced by doubling-up the standard PWL-model. This model uses two piecewise-linear diodes in parallel, as a way to model a single diode more accurately. PWL Diode model with 2 branches. The top branch has a lower forward-voltage and a higher ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
Date/Time Thumbnail Dimensions User Comment; current: 00:36, 30 January 2025: 771 × 918 (1 KB): Mikhail Ryazanov {{Information |Description={{en|1=Current–voltage characteristic of a Gunn diode, a type of high-frequency diode used in microwave oscillators.
For example, a diode with a Zener breakdown voltage of 3.2 V exhibits a voltage drop of very nearly 3.2 V across a wide range of reverse currents. The Zener diode is therefore well suited for applications such as the generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current applications. [2]
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. [1] It was largely superseded by the diac.
English: Diode I-V diagram. Includes three main areas of operation: breakdown, reverse-biased, and forward-biased. Vbr denotes the breakdown voltage, and Vd denotes the voltage that is typically considered "on" (conducting current).