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A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
In 2005, Toshiba demonstrated a 15 nm FinFET process, with a 15 nm gate length and 10 nm fin width, using a sidewall spacer process. [18] It had erstwhile been suggested in 2003 that for the 16 nm node, a logic transistor would have a gate length of about 5 nm.
In 1998, the team developed the first N-channel FinFETs and successfully fabricated devices down to a 17 nm process. The following year, they developed the first P-channel FinFETs. [12] They coined the term "FinFET" (fin field-effect transistor) in a December 2000 paper. [13] In current usage the term FinFET has a less precise definition.
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.
The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor.
In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode.
Reverse leakage current in a semiconductor device is the current when the device is reverse biased.. Under reverse bias, an ideal semiconductor device should not conduct any current, however, due to attraction of dissimilar charges, the positive side of the voltage source draws free electrons (majority carriers in the n-region) away from the P-N junction.