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FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
The dual-gate MOSFET has a tetrode configuration, where both gates control the current in the device. It is commonly used for small-signal devices in radio frequency applications where biasing the drain-side gate at constant potential reduces the gain loss caused by Miller effect , replacing two separate transistors in cascode configuration.
These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage. In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on.
The DGMOSFET (dual-gate MOSFET) or DGMOS, a MOSFET with two insulated gates. The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation.
A dual-gate MOSFET often functions as a "one-transistor" cascode [citation needed]. Common in the front ends of sensitive VHF receivers, a dual-gate MOSFET is operated as a common-source amplifier with the primary gate (usually designated "gate 1" by MOSFET manufacturers) connected to the input and the second gate grounded (bypassed ...
It can be thought of as a second gate, and is sometimes referred to as the back gate, and accordingly the body effect is sometimes called the back-gate effect. [ 3 ] For an enhancement-mode nMOS MOSFET, the body effect upon threshold voltage is computed according to the Shichman–Hodges model, [ 4 ] which is accurate for older process nodes ...
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.