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The Shockley–Queisser limit, zoomed in near the region of peak efficiency. In a traditional solid-state semiconductor such as silicon, a solar cell is made from two doped crystals, one an n-type semiconductor, which has extra free electrons, and the other a p-type semiconductor, which is lacking free electrons, referred to as "holes."
Third-generation photovoltaic cells are solar cells that are potentially able to overcome the Shockley–Queisser limit of 31–41% power efficiency for single bandgap solar cells. This includes a range of alternatives to cells made of semiconducting p-n junctions ("first generation") and thin film cells ("second generation").
The numbers are normally not similar as you suggest. But in any case, f c cannot be more than 1, and the upper limit (the Shockley-Queisser limit) requires taking f c = 1. Eric Kvaalen 19:05, 6 September 2016 (UTC) Yes, virtually all above-gap photons come from recombination, but not all recombinations create above-bandgap photons.
They assumed no carriers were collected at the IB and that the device was under full concentration. [1] They found the maximum efficiency to be 63.2%, for a bandgap of 1.95eV with the IB 0.71eV from either the valence or conduction band. [1] Under one sun illumination the limiting efficiency is 47%. [2]
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The Shockley–Queisser limit radiative efficiency limit, also known as the detailed balance limit, [105] [106] is about 31% under an AM1.5G solar spectrum at 1000 W/m 2, for a Perovskite bandgap of 1.55 eV. [107] This is slightly smaller than the radiative limit of gallium arsenide of bandgap 1.42 eV which can reach a radiative efficiency of 33%.