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Due to its use in advanced electronics and optics, Germanium is considered a technology-critical element (by e.g. the European Union), essential to fulfill the green and digital transition. As China controls 60% of global Germanium production it holds a dominant position over the world's supply chains.
Germanium (Ge) was a widely used early semiconductor material but its thermal sensitivity makes it less useful than silicon. Today, germanium is often alloyed with silicon for use in very-high-speed SiGe devices; IBM is a major producer of such devices.
While silicon detectors cannot be thicker than a few millimeters, germanium can have a sensitive layer (depletion region) thickness of centimeters, and therefore can be used as a total absorption detector for gamma rays up to a few MeV. These detectors are also called high-purity germanium detectors (HPGe) or hyperpure germanium detectors.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS ...
Gallium and germanium are used in semiconductors, while germanium is also used in infrared technology, fibre optic cables and solar cells. ... several Chinese industry groups on Tuesday called for ...
Just one month after China announced it would curb exports of germanium and gallium, both essential for making semiconductors, its overseas shipments of the materials fell to zero.
With gallium arsenide, a layer of gold-germanium alloy (sometimes with nickel) is used to achieve low contact resistance; an ohmic contact is formed by diffusion of germanium, forming a thin, highly n-doped region under the metal facilitating the connection, leaving gold deposited over it.