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  2. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    [12] [13] The invention of the MOSFET enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores. [14] The first modern memory cells were introduced in 1964, when John Schmidt designed the first 64-bit p-channel MOS static random-access memory (SRAM).

  3. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), [12] invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, [13] enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. [12]

  4. 1T-SRAM - Wikipedia

    en.wikipedia.org/wiki/1T-SRAM

    Also, some of those steps require very high temperatures and must take place after the logic transistors are formed, possibly damaging them. 1T-SRAM is also available in device (IC) form. The GameCube was the first video game system to use 1T-SRAM as main memory storage; the GameCube possesses several dedicated 1T-SRAM devices. 1T-SRAM is also ...

  5. 3D XPoint - Wikipedia

    en.wikipedia.org/wiki/3D_XPoint

    Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...

  6. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    The 1T-1C storage cell design in a FeRAM is similar in construction to the storage cell in DRAM, in that both cell types include one capacitor and one access transistor. In a DRAM cell capacitor, a linear dielectric is used, whereas in a FeRAM cell capacitor the dielectric structure includes ferroelectric material , typically lead zirconate ...

  7. P2 (storage media) - Wikipedia

    en.wikipedia.org/wiki/P2_(storage_media)

    P2 (P2 is a short form for "Professional Plug-In") is a professional digital recording solid-state memory storage media format introduced by Panasonic in 2004. The P2 card is essentially a RAID of Secure Digital (SD) memory cards with an LSI controller tightly packaged in a die-cast PC Card (formerly PCMCIA) enclosure.

  8. Multi-level cell - Wikipedia

    en.wikipedia.org/wiki/Multi-level_cell

    SanDisk X4 flash memory cards, introduced in 2009, was one of the first products based on NAND memory that stores 4 bits per cell, commonly referred to as quad-level-cell (QLC), using 16 discrete charge levels (states) in each individual transistor. The QLC chips used in these memory cards were manufactured by Toshiba, SanDisk and SK Hynix. [30 ...

  9. Transistor model - Wikipedia

    en.wikipedia.org/wiki/Transistor_model

    Transistor models are used for almost all modern electronic design work. Analog circuit simulators such as SPICE use models to predict the behavior of a design. Most design work is related to integrated circuit designs which have a very large tooling cost, primarily for the photomasks used to create the devices, and there is a large economic incentive to get the design working without any ...