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Magnetostriction is a property of magnetic materials that causes them to change their shape or dimensions during the process of magnetization.The variation of materials' magnetization due to the applied magnetic field changes the magnetostrictive strain until reaching its saturation value, λ.
The magnetomechanical effect is a fundamental feature of ferromagnetism. The fact that the application of external stresses alters the flux density of a magnetized ferromagnet, and thus the shape, and size of its hysteresis loops is easily changeable.
Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field.There are a variety of effects that can be called magnetoresistance.
The magnetostriction characterizes the shape change of a ferromagnetic material during magnetization, whereas the inverse magnetostrictive effect characterizes the change of sample magnetization (for given magnetizing field strength ) when mechanical stresses are applied to the sample.
The other energy cost to creating domains with magnetization at an angle to the "easy" direction is caused by the phenomenon called magnetostriction. [3] When the magnetization of a piece of magnetic material is changed to a different direction, it causes a slight change in its shape.
However, coupling between the magnetization and the lattice does result in deformation, an effect called magnetostriction. To keep the lattice from deforming, a stress must be applied. If the crystal is not under stress, magnetostriction alters the effective magnetocrystalline anisotropy.
Seen in some magnetic materials, saturation is the state reached when an increase in applied external magnetic field H cannot increase the magnetization of the material further, so the total magnetic flux density B more or less levels off.
Electrostriction is a property of all dielectric materials, [2] and is caused by displacement of ions in the crystal lattice upon being exposed to an external electric field.