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A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting (but non-conducting) substrate , such as glass .
FlexEnable was spun-out of Cambridge University with a focus on replacing silicon on glass in large-area electronics with organic thin-film transistors (OTFTs) on flexible substrates, enabling optoelectronic modules which are flexible, ultra-thin, ultra-light and unbreakable.
Silicon thin-film solar cells on flexible substrates allow a significant cost reduction of large-area photovoltaics for several reasons: [28] The so-called 'roll-to-roll'-deposition on flexible sheets is much easier to realize in terms of technological effort than deposition on fragile and heavy glass sheets.
The concept of a thin-film transistor (TFT) was first proposed by John Wallmark who in 1957 filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric. Thin-film transistor was developed in 1962 by Paul K. Weimer who implemented Wallmark's ideas. [16] The TFT is a special type of MOSFET. [17]
Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.
In 1966, T. P. Brody and H. E. Kunig at Westinghouse Electric fabricated enhancement- and depletion-mode indium arsenide (InAs) MOS thin-film transistors (TFTs). [5] [6] In 2022, the first dual-mode organic transistor that behaves in both depletion mode and enhancement mode was reported by a team at University of California-Santa Barbara. [7]