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Ferromagnetism is a property of certain materials (such as iron) that results in a significant, observable magnetic permeability, and in many cases, a significant magnetic coercivity, allowing the material to form a permanent magnet. Ferromagnetic materials are noticeably attracted to a magnet, which is a consequence of their substantial ...
This page is a list of substances which exhibit ferromagnetism in the broad sense that includes ferrimagnetism. Some of these are elemental metals , while others are alloys , oxides or other chemical compounds .
A ferrimagnetic material is a material that has populations of atoms with opposing magnetic moments, as in antiferromagnetism, but these moments are unequal in magnitude, so a spontaneous magnetization remains. [1] This can for example occur when the populations consist of different atoms or ions (such as Fe 2+ and Fe 3+).
An everyday example is a refrigerator magnet used to hold notes on a refrigerator door. Materials that can be magnetized, which are also the ones that are strongly attracted to a magnet, are called ferromagnetic (or ferrimagnetic).
Unlike many ferromagnetic materials, most ferrites are not electrically conductive, ... it is an example of normal structure spinel ferrite. [18] [page needed]
Magnetic domain structure is responsible for the magnetic behavior of ferromagnetic materials like iron, nickel, cobalt and their alloys, and ferrimagnetic materials like ferrite. This includes the formation of permanent magnets and the attraction of ferromagnetic materials to a magnetic field.
A lot of the elusive extrinsic ferromagnetism (or phantom ferromagnetism) is observed in thin films or nanostructured materials. [11] Several examples of proposed ferromagnetic semiconductor materials are listed below. Notice that many of the observations and/or predictions below remain heavily debated.
A typical TMR device consists of two layers of ferromagnetic materials separated by a thin tunnel barrier (~2 nm) made of a multiferroic thin film. [46] In such a device, spin transport across the barrier can be electrically tuned. In another configuration, a multiferroic layer can be used as the exchange bias pinning layer.