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Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging.NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET.
In Very-Large-Scale Integration (VLSI) integrated circuit microprocessor design and semiconductor fabrication, a process corner represents a three or six sigma variation from nominal doping concentrations (and other parameters [2]) in transistors on a silicon wafer.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
[2] Certain semiconductor fabrication technologies also include deep trench isolation , a related feature often found in analog integrated circuits . The effect of the trench edge has given rise to what has recently been termed the "reverse narrow channel effect" [ 3 ] or "inverse narrow width effect". [ 4 ]
WASHINGTON (Reuters) -A U.S. appeals court on Monday threw out a $2.18 billion patent-infringement award won by patent owner VLSI Technology against Intel Corp, overturning one of the largest ...
The reference designator usually consists of one or two letters followed by a number, e.g. C3, D1, R4, U15. The number is sometimes followed by a letter, indicating that components are grouped or matched with each other, e.g. R17A, R17B. The IEEE 315 standard contains a list of Class Designation Letters to use for electrical and electronic ...
The report, published in 1976, suggested that ARPA fund development across a number of fields in order to deal with the complexity that was about to appear due to these "very-large-scale integrated circuits". [4] Later that year, Sutherland wrote a letter to his brother Bert who was at that time working at Xerox PARC. He suggested a joint ...
The Mead–Conway VLSI chip design revolution, or Mead and Conway revolution, was a very-large-scale integration design revolution starting in 1978 which resulted in a worldwide restructuring of academic materials in computer science and electrical engineering education, and was paramount for the development of industries based on the application of microelectronics.