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Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. [1] [2] For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an ...
Pendeo-epitaxy is mainly performed from the vapor phase via MOCVD and HVPE, and initially is used for growing gallium nitride (GaN) microelectronic device structures. In the case of GaN material system, LEO and PE technology was initiated in the late nineties and early 2000s in Prof. R.F. Davis group at NCSU.
Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. [6] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). [7]
ASM's technologies include atomic layer deposition, epitaxy, chemical vapor deposition and diffusion. [1] The company was founded by Arthur del Prado (1931-2016) as 'Advanced Semiconductor Materials' in 1964. [2] From 2008 until 2020, son of Arthur del Prado, Chuck del Prado was CEO.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
Alfred Yi Cho (Chinese: 卓以和; pinyin: Zhuó Yǐhé; born July 10, 1937 [1]) is a Chinese-American electrical engineer, inventor, and optical engineer.He is the Adjunct Vice President of Semiconductor Research at Alcatel-Lucent's Bell Labs.
Molecular beam epitaxy (MBE) is an epitaxy method for the growth of a crystalline material on a crystalline substrate to form an ordered layer. MBE is performed in high vacuum or ultra-high vacuum , the elements are heated in different electron beam evaporators until they sublime .
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO 2 or Si 3 N 4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask. [ 1 ]