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Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. [ 1 ] [ 2 ] For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. [6] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). [7]
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer.
Epitaxy [114] [126] Molecular beam epitaxy (MBE) [127] Ion beam deposition [128] Plasma ashing (for complete photoresist removal/photoresist stripping, also known as dry strip, [129] historically done with a chemical solvent called a resist stripper, [130] [131] to allow wafers to undergo another round of photolithography) Thermal treatments
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), [1] is a chemical vapour deposition method used to produce single- or polycrystalline thin films.
Atomic layer epitaxy (ALE), [1] more generally known as atomic layer deposition (ALD), [2] is a specialized form of thin film growth that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate.
Epitaxy is used to deposit very thin (micrometer to nanometer scale) layers of the same or different materials on the surface of an existing single crystal. [11] Applications of this technique lie in the areas of semiconductor production, with potential uses in other nanotechnological fields and catalysis.