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The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain. The introduction of the ...
Teal joined Bell Labs in 1930 and would remain employed there for 22 years. [1] During his time there, he continued to work with germanium and silicon. [1] When William Shockley's group at Bell Labs invented the transistor in 1947, Teal realized that substantial improvements in the device would result if it was fabricated using a single crystal, rather than the polycrystalline material then ...
[25] [23] Atalla's silicon transistor passivation technique by thermal oxide [26] was the basis for several important inventions in 1959: the MOSFET (MOS transistor) by Atalla and Dawon Kahng at Bell Labs, the planar process by Jean Hoerni at Fairchild Semiconductor. [22] [25] [27]
The first working silicon transistor was developed at Bell Labs on January 26, 1954, by Morris Tanenbaum. The first production commercial silicon transistor was announced by Texas Instruments in May 1954. This was the work of Gordon Teal, an expert in growing crystals of high purity, who had previously worked at Bell Labs. [47] [48] [49]
[30]: 153 [31]: 145 Shive's invention sparked [32] Shockley's invention of the junction transistor. [30]: 143 A few months later he invented an entirely new, considerably more robust, type of transistor with a layer or 'sandwich' structure. This structure went on to be used for the vast majority of all transistors into the 1960s, and evolved ...
The invention of the transistor in December 1947 is one of the hallmark moments in humanity’s technological history, right up there with Maxwell’s equations and Alessandro Volta’s battery.
The MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick discovered surface passivation by silicon dioxide and used their finding to create the first planar transistors, the first field effect transistors in which drain and source were adjacent at the same surface.
The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point ...