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"Twisted Transistor" is a song written and recorded by American nu metal band Korn for their seventh studio album, See You on the Other Side. It was released as the ...
TFT dual-transistor pixel or cell technology is a reflective-display technology for use in very-low-power-consumption applications such as electronic shelf labels (ESL), digital watches, or metering. DTP involves adding a secondary transistor gate in the single TFT cell to maintain the display of a pixel during a period of 1s without loss of ...
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting (but non-conducting) substrate , such as glass .
The field-effect transistor, sometimes called a unipolar transistor, uses either electrons (in n-channel FET) or holes (in p-channel FET) for conduction. The four terminals of the FET are named source, gate, drain, and body (substrate). On most FETs, the body is connected to the source inside the package, and this will be assumed for the ...
The twisted nematic effect (TN-effect) was a major technological breakthrough that made the manufacture of large, thin liquid crystal displays practical and cost competitive. Unlike earlier flat-panel displays, TN-cells did not require a current to flow for operation and used low operating voltages suitable for use with batteries.
Used in twisted pair Ethernet. [2] Common-mode filtering may also be used to prevent egress of noise for electromagnetic compatibility purposes: High frequency common-mode signals (e.g., RF noise from a computing circuit) may be blocked using a ferrite bead clamped to the outside of a cable.
A STN (super-twisted nematic) display is a type of liquid-crystal display (LCD). An LCD is a flat-panel display that uses liquid crystals to change its properties when exposed to an electric field, which can be used to create images. This change is called the twisted nematic (TN) field effect. Earlier TN displays twisted the liquid crystal ...
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...