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Historical lowest retail price of computer memory and storage Electromechanical memory used in the IBM 602, an early punch multiplying calculator Detail of the back of a section of ENIAC, showing vacuum tubes Williams tube used as memory in the IAS computer c. 1951 8 GB microSDHC card on top of 8 bytes of magnetic-core memory (1 core is 1 bit.)
Memory architecture describes the methods used to implement electronic computer data storage in a manner that is a combination of the fastest, most reliable, most durable, and least expensive way to store and retrieve information. Depending on the specific application, a compromise of one of these requirements may be necessary in order to ...
Off-line storage is computer data storage on a medium or a device that is not under the control of a processing unit. [9] The medium is recorded, usually in a secondary or tertiary storage device, and then physically removed or disconnected. It must be inserted or connected by a human operator before a computer can access it again.
There are four major storage levels. [1] Internal – Processor registers and cache. Main – the system RAM and controller cards. On-line mass storage – Secondary storage. Off-line bulk storage – Tertiary and Off-line storage. This is a general memory hierarchy structuring. Many other structures are useful.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process.
Solid-state storage (SSS) is non-volatile computer storage that has no moving parts; it uses only electronic circuits. This solid-state design dramatically differs from the commonly-used competing technology of electromechanical magnetic storage which uses moving media coated with magnetic material .
The memory cells are laid out in rectangular arrays on the surface of the chip. The 1-bit memory cells are grouped in small units called words which are accessed together as a single memory address. Memory is manufactured in word length that is usually a power of two, typically N=1, 2, 4 or 8 bits.
The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written. In general, the operation of FeRAM is similar to ferrite core memory, one of the primary forms of computer memory in the 1960s. However, compared to core memory, FeRAM ...