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The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.
The MMC topology is similar to the three-level in that switching on various IGBTs will connect different capacitors to the circuit. As each IGBT "switch" has its own capacitor, voltage can be built up in discrete steps. Adding additional levels increases the number of steps, better approximating a sine wave.
GTO thyristors suffer from long switch-off times, whereby after the forward current falls, there is a long tail time where residual current continues to flow until all remaining charge from the device is taken away. This restricts the maximum switching frequency to about 1 kHz. It may be noted, however, that the turn-off time of a GTO is ...
The switching losses are proportional to the switching frequency. In a complete real-world buck converter, there is also a command circuit to regulate the output voltage or the inductor current. This circuit and the MOSFET gate controller have a power consumption, impacting the overall efficiency of the converter.
The net result is that the turn-off switching loss of an IGBT is considerably higher than its turn-on loss. Generally, in datasheets, turn-off energy is mentioned as a measured parameter; that number has to be multiplied with the switching frequency of the intended application in order to estimate the turn-off loss.
The IGCT's much faster turn-off times compared to the GTO's allows it to operate at higher frequencies—up to several kHz for very short periods of time. However, because of high switching losses , typical operating frequency is up to 500 Hz. Neutron-Transmutation-Doped Silicon used as the IGCT base substrate. [4]
For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage. [1] Illustration of safe operating area of a bipolar power transistor.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]