Search results
Results From The WOW.Com Content Network
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
A subsurface Zener diode, also called a buried Zener, is a device similar to the surface Zener, but the doping and design is such that the avalanche region is located deeper in the structure, typically several micrometers below the oxide. Hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer ...
These diodes can indefinitely sustain a moderate level of current during breakdown. The voltage at which the breakdown occurs is called the breakdown voltage . There is a hysteresis effect; once avalanche breakdown has occurred, the material will continue to conduct even if the voltage across it drops below the breakdown voltage.
Breakdown voltage is a parameter of a diode that defines the largest reverse voltage that can be applied without causing an exponential increase in the leakage current in the diode. Exceeding the breakdown voltage of a diode, per se, is not destructive; although, exceeding its current capacity will be. In fact, Zener diodes are essentially just ...
The Zener effect is primarily exhibited by reverse-biased diodes and bipolar transistor base-emitter junctions that breakdown below about 7 volts. The breakdown is due to internal field emission, since the junctions are thin, and the electric field is high. Zener-type breakdown is shot noise.
This effect is used to advantage in Zener diode regulator circuits. Zener diodes have a low breakdown voltage. A standard value for breakdown voltage is for instance 5.6 V. This means that the voltage at the cathode cannot be more than about 5.6 V higher than the voltage at the anode (though there is a slight rise with current), because the ...
Severely overloaded Zener diodes in reverse bias shorting. A sufficiently high voltage causes avalanche breakdown of the Zener junction; that and a large current being passed through the diode causes extreme localised heating, melting the junction and metallisation and forming a silicon-aluminium alloy that shorts the terminals.
Internal resistance causes "leveling off" of a real diode's I–V curve at high forward bias. The Shockley equation doesn't model this, but adding a resistance in series will. The reverse breakdown region (particularly of interest for Zener diodes) is not modeled by the Shockley equation.