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Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state , rather than as free electrons across a vacuum (typically liberated by thermionic emission ) or as free electrons and ions through an ionized gas .
The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers. Developments in quantum physics led in turn to the invention of the transistor in 1947 [ 7 ] and the integrated circuit in 1958.
The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.
The first solid-state power semiconductor devices were copper oxide rectifiers, used in early battery chargers and power supplies for radio equipment, announced in 1927 by L.O. Grundahl and P. H. Geiger. [2] The first germanium power semiconductor device appeared in 1952 with the introduction of the power diode by R.N. Hall.
Semiconductor device fabrication; MOSFET scaling (process nodes) 20 μm – 1968; 10 μm – 1971; 6 μm – 1974; 3 μm – 1977
These devices are specially designed for low-voltage stabilization applications requiring a guaranteed voltage over a wide current range and highly stable over temperature. Transient voltage suppression diode (TVS) These are avalanche diodes designed specifically to protect other semiconductor devices from high-voltage transients. [45]
The term optoelectronics connotes devices or circuits that comprise both electrical and optical functions, i.e., a thin-film semiconductor device. The term electro-optics came into earlier use and specifically encompasses nonlinear electrical-optical interactions applied, e.g., as bulk crystal modulators such as the Pockels cell , but also ...
Asad Ali Abidi developed RF CMOS technology at UCLA during the late 1980s to early 1990s.. Pakistani engineer Asad Ali Abidi, while working at Bell Labs and then UCLA during the 1980s–1990s, pioneered radio research in metal–oxide–semiconductor (MOS) technology and made seminal contributions to radio architecture based on complementary MOS (CMOS) switched-capacitor (SC) technology. [13]