Ads
related to: bipolar transistor reverse osmosis
Search results
Results From The WOW.Com Content Network
Bipolar transistors have four distinct regions of operation, defined by BJT junction biases: [9] [10] Forward-active (or simply active) The base–emitter junction is forward biased and the base–collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, β F, in
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is ...
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
For a bipolar junction transistor amplifier, this requirement means that the transistor must stay in the active mode, and avoid cut-off or saturation. The same requirement applies to a MOSFET amplifier, although the terminology differs a little: the MOSFET must stay in the active mode , and avoid cutoff or ohmic operation.