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The avalanche photodiode was invented by Japanese engineer Jun-ichi Nishizawa in 1952. [1] However, study of avalanche breakdown, micro-plasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent.
Commercial single-photon avalanche diode module for optical photons. A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode [1] (G-APD or GM-APD [2]) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours.
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
Avalanche photodiodes are photodiodes with structure optimized for operating with high reverse bias, approaching the reverse breakdown voltage. This allows each photo-generated carrier to be multiplied by avalanche breakdown , resulting in internal gain within the photodiode, which increases the effective responsivity of the device.
Photodiodes can be further categorized into: a. PIN Photodiodes: These photodiodes have an additional intrinsic (I) region between the P and N regions, which extends the depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead of a PN junction.
Avalanche breakdown (or the avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche.
In solid-state electronics, silicon photomultipliers (SiPMs) are single-photon-sensitive devices based on pixels of single-photon avalanche diodes (SPADs) implemented on common silicon substrate. [1] The dimension of each single avalanche diode can vary from 10 to 100 micrometres , with a typical density of up to 1,000 pixels/mm 2 .
The Zener effect is distinct from avalanche breakdown. Avalanche breakdown involves minority carrier electrons in the transition region being accelerated, by the electric field, to energies sufficient for freeing electron-hole pairs via collisions with bound electrons. The Zener and the avalanche effect may occur simultaneously or independently ...