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1.2 CMOS (single-gate) 1.3 Multi-gate MOSFET ... 2.12 Processors using 180 nm manufacturing ... a programmable sound generator developed for the Commodore 64 in 1982.
quad 2-input NOR gate driver 50 Ω: 14 SN74128: 74x130 2 retriggerable monostable multivibrator 16 SN74130: 74131 4 quad 2-input AND gate open-collector 15 V 14 ITT74131: 74AS131, 74ALS131 1 3-to-8 line decoder/demultiplexer, address register, inverting outputs 16 SN74AS131: 74x132 4 quad 2-input NAND gate Schmitt trigger 14 SN74LS132: 74x133 1
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
The reddish structures are polysilicon gates, and the solid at the bottom is the crystalline silicon bulk. GDSII stream format ( GDSII ), is a binary database file format which is the de facto industry standard for electronic design automation (EDA) data exchange of integrated circuit (IC) or IC layout artwork. [ 1 ]
The following is a list of CMOS 4000-series digital logic integrated circuits.In 1968, the original 4000-series was introduced by RCA.Although more recent parts are considerably faster, the 4000 devices operate over a wide power supply range (3V to 18V recommended range for "B" series) and are well suited to unregulated battery powered applications and interfacing with sensitive analogue ...
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
Typically the width is much larger than the length of the gate. A gate length of 1 μm limits the upper frequency to about 5 GHz, 0.2 μm to about 30 GHz. The names of the terminals refer to their functions. The gate terminal may be thought of as controlling the opening and closing of a physical gate.
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl