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[2] [7] The heat of formation is c. 24 kilocalories (100 kJ) per mol. [7] It is a semiconductor with a reported bandgap of c. 3.2eV, [9] however, a thin zinc nitride film prepared by electrolysis of molten salt mixture containing Li 3 N with a zinc electrode showed a band-gap of 1.01 eV. [10] Zinc nitride reacts violently with water to form ...
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Platinum nitride and osmium nitride may contain N 2 units, and as such should not be called nitrides. [11] [12] Nitrides of heavier members from group 11 and 12 are less stable than copper nitride (Cu 3 N) and zinc nitride (Zn 3 N 2): dry silver nitride (Ag 3 N) is a contact explosive which may detonate from the slightest touch, even a falling ...
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Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure .
Nitriding alloys are alloy steels with nitride-forming elements such as aluminum, chromium, molybdenum and titanium. In 2015, nitriding was used to generate a unique duplex microstructure in an iron-manganese alloy ( martensite - austenite , austenite - ferrite ), known to be associated with strongly enhanced mechanical properties.
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