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For example, a diode with a Zener breakdown voltage of 3.2 V exhibits a voltage drop of very nearly 3.2 V across a wide range of reverse currents. The Zener diode is therefore well suited for applications such as the generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current applications. [2]
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
When the absorber is in the primary circuit, e.g. a Zener diode (or LED) with voltage V z connected "backwards" across the primary windings, the current waveshape is a triangle with the time t open determined by the formula I p = I peak,m - V z ×T open /L p, here I peak,m being the primary current at the time the switch opens. When the ...
Reference voltage vs free-air temperature at test conditions. Design-center (middle plot) and worst-case deviation of ±2% (upper and lower plots) [12] The nominal reference voltage, V REF =2.495 V, stated in a datasheet, is tested in zener mode at an ambient temperature of +25 °C (77 °F), and I CA =10 mA. [13]
In the Zener diode, the concept of PIV is not applicable. A Zener diode contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the Zener voltage), and avalanche does not ...
Zener diodes are also frequently used to provide a reference voltage of moderate stability and accuracy, useful for many electronic devices. An avalanche diode displays a similar stable voltage over a range of current. The most stable diodes of this type are made by temperature-compensating a Zener diode by placing it in series with a forward ...
The Zener effect is primarily exhibited by reverse-biased diodes and bipolar transistor base-emitter junctions that breakdown below about 7 volts. The breakdown is due to internal field emission, since the junctions are thin, and the electric field is high. Zener-type breakdown is shot noise.
The transfer characteristic has exactly the same shape of the previous basic configuration, and the threshold values are the same as well. On the other hand, in the previous case, the output voltage was depending on the power supply, while now it is defined by the Zener diodes (which could also be replaced with a single double-anode Zener diode).