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  2. Vacancy defect - Wikipedia

    en.wikipedia.org/wiki/Vacancy_defect

    where N v is the vacancy concentration, Q v is the energy required for vacancy formation, k B is the Boltzmann constant, T is the absolute temperature, and N is the concentration of atomic sites i.e. = where ρ is density, N A the Avogadro constant, and M the molar mass. It is the simplest point defect.

  3. Crystallographic defect - Wikipedia

    en.wikipedia.org/wiki/Crystallographic_defect

    A nearby pair of a vacancy and an interstitial is often called a Frenkel defect or Frenkel pair. This is caused when an ion moves into an interstitial site and creates a vacancy. Due to fundamental limitations of material purification methods, materials are never 100% pure, which by definition induces defects in crystal structure.

  4. Failure reporting, analysis, and corrective action system

    en.wikipedia.org/wiki/Failure_reporting...

    Failure Reporting (FR). The failures and the faults related to a system, a piece of equipment, a piece of software or a process are formally reported through a standard form (Defect Report, Failure Report). Analysis (A). Perform analysis in order to identify the root cause of failure. Corrective Actions (CA).

  5. Kröger–Vink notation - Wikipedia

    en.wikipedia.org/wiki/Kröger–Vink_Notation

    For example, the defect may result in an ion on its own ion site or a vacancy on the cation site. To complete the reactions, the proper number of each ion must be present (mass balance), an equal number of sites must exist (site balance), and the sums of the charges of the reactants and products must also be equal (charge balance).

  6. Nitrogen-vacancy center - Wikipedia

    en.wikipedia.org/wiki/Nitrogen-vacancy_center

    Simplified atomic structure of the NV center. The nitrogen-vacancy center (N-V center or NV center) is one of numerous photoluminescent point defects in diamond.Its most explored and useful properties include its spin-dependent photoluminescence (which enables measurement of the electronic spin state using optically detected magnetic resonance), and its relatively long (millisecond) spin ...

  7. F-center - Wikipedia

    en.wikipedia.org/wiki/F-center

    An F center is ionized and becomes a vacancy; the electron moves through the material to bind to another F center, which becomes an F − center. The electron vacancy moves through the material and ends up next to the F − center, which gives its electron back to the vacancy, forming two neighbouring F centers, i.e. an F 2 center.

  8. Fault tree analysis - Wikipedia

    en.wikipedia.org/wiki/Fault_tree_analysis

    A fault tree diagram. Fault tree analysis (FTA) is a type of failure analysis in which an undesired state of a system is examined. This analysis method is mainly used in safety engineering and reliability engineering to understand how systems can fail, to identify the best ways to reduce risk and to determine (or get a feeling for) event rates of a safety accident or a particular system level ...

  9. Diffusion creep - Wikipedia

    en.wikipedia.org/wiki/Diffusion_creep

    The number of vacancies may also be influenced by the number of chemical impurities in the crystal lattice, if such impurities require the formation of vacancies to exist in the lattice. A vacancy can move through the crystal structure when the neighbouring particle "jumps" in the vacancy, so that the vacancy moves in effect one site in the ...

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