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Band bending can be induced by several types of contact. In this section metal-semiconductor contact, surface state, applied bias and adsorption induced band bending are discussed. Figure 1: Energy band diagrams of the surface contact between metals and n-type semiconductors.
Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
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To understand how band structure changes relative to the Fermi level in real space, a band structure plot is often first simplified in the form of a band diagram. In a band diagram the vertical axis is energy while the horizontal axis represents real space. Horizontal lines represent energy levels, while blocks represent energy bands.
Field effect: Top panels: An applied voltage bends bands, depleting holes from surface (band diagram, left). The charge inducing the bending is balanced by a layer of negative acceptor-ion charge (right). Bottom panel: A larger applied voltage further depletes holes but conduction band lowers enough in energy to populate an inversion layer.
Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). [1]
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For example, a tensile-tested steel bar with a square cross-section tends to develop comparatively more bands than would a bar of identical composition having a circular cross-section. [3] The formation of a Lüders band is preceded by a yield point and a drop in the flow stress.